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| AP9926M Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package SO-8 S1 G2 S2 G1 D2 D1 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 30m 6A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 12 6 4.8 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 20020426 AP9926M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 15.6 12.5 1 6.5 7 14.5 19 12 355 190 85 Max. Units 30 45 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS= 12V ID=6A VDS=20V VGS=5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions Tj=25, IS=1.7A, VGS=0V Min. - Typ. - Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. AP9926M 25 25 T C =25 o C 20 V G =4.5V V G =4.0V V G =3.5V 20 T C =150 o C V G =4.5V V G =4.0V V G =3.5V ID , Drain Current (A) ID , Drain Current (A) V G =3.0V 15 V G =2.5V 15 V G =3.0V V G =2.5V 10 10 5 V G =2.0V V G =2.0V 5 0 0 0.5 1 1.5 2 2.5 3 0 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 I D =6A 40 I D =6A o 1.6 T C =25 C V G =4.5V RDSON (m ) 35 Normalized R DS(ON) 2 3 4 5 6 1.4 1.2 30 1.0 25 0.8 20 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9926M 8 2.5 7 2 6 ID , Drain Current (A) 5 1.5 4 PD (W) 1 0.5 0 25 50 75 100 125 150 0 50 100 150 3 2 1 0 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 DUTY=0.5 Normalized Thermal Response (R thja) 0.2 10 1ms 10ms ID (A) 1 0.1 0.1 0.05 0.02 PDM 100ms 1s 0.1 t 0.01 T SINGLE PULSE 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270/W T c =25 C Single Pulse 0.01 0.1 1 10 100 o DC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9926M 12 1000 f=1.0MHz I D =6A 10 VGS , Gate to Source Voltage (V) V DS =10V 8 Ciss V DS =15V V DS =20V Coss C (pF) 100 6 Crss 4 2 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.6 1.4 10 T j =150 o C T j =25 o C 1 1.2 VGS(th) (V) 1 IS(A) 0.8 0.6 0.1 0.4 0.01 0 0.4 0.8 1.2 1.6 0.2 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9926M VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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